Gallium nitride (GaN)-raws li cov ntaub ntawv yog lub npe hu ua lub thib peb tiam semiconductors, uas nws spectral range npog tag nrho cov nyob ze-infrared, pom thiab ultraviolet wavelength bands, thiab muaj cov ntaub ntawv tseem ceeb nyob rau hauv lub teb ntawm optoelectronics.GaN-raws li ultraviolet lasers muaj ib qho tseem ceeb. daim ntawv thov kev cia siab nyob rau hauv thaj tsam ntawm ultraviolet lithography, ultraviolet curing, kuaj kab mob, thiab kev sib txuas lus ultraviolet vim cov yam ntxwv ntawm luv wavelengths, siab photon zog, thiab muaj zog tawg. Txawm li cas los xij, vim tias GaN-raws li UV lasers tau npaj raws li qhov tsis sib haum xeeb loj heterogeneous epitaxial cov khoom siv thev naus laus zis, cov khoom siv tsis raug, doping yog qhov nyuaj, tsis tshua muaj quantum zoo luminescence efficiency, ntaus ntawv poob, yog lub thoob ntiaj teb semiconductor lasers hauv kev tshawb fawb ntawm qhov nyuaj. , los ntawm domestic thiab txawv teb chaws zoo mloog.
Semiconductor Research Institute ntawm Suav Academy ntawm Kev Tshawb Fawb, Zhao Degang tus kws tshawb fawb, Yang Jing tus kws tshawb fawb lub sijhawm ntev tsom mus rau GaN-based optoelectronic cov ntaub ntawv thiab cov cuab yeej tshawb fawb. 2016 tsim GaN-raws li UV laser [J. Semicond. 38, 051001 (2017)], 2022 kom paub qhov hluav taws xob txhaj tshuaj ntawm excitation ntawm AlGaN UV laser (357.9 nm) [J. Semicond. 43, 1 (J. Semicond. 43, 1 (2017)]. Semicond. 43, 1 (2022)], thiab nyob rau hauv tib lub xyoo, lub high-power UV laser nrog ib tug nruam tso zis zog ntawm 3.8 W ntawm chav tsev kub yog paub [Opt. Laser Technol. 156, 108574 (2022)]. Tsis ntev los no, peb pab neeg tau ua qhov tseem ceeb hauv GaN-based high-power UV lasers, thiab pom tias qhov kub tsis zoo ntawm UV lasers feem ntau cuam tshuam nrog kev tsis muaj zog. ntawm cov neeg nqa khoom hauv UV quantum qhov dej, thiab cov yam ntxwv kub ntawm high-power UV lasers tau txhim kho tau zoo los ntawm kev qhia txog cov qauv tshiab ntawm AlGaN quantum barriers thiab lwm cov tswv yim, thiab cov khoom siv hluav taws xob tas li ntawm UV lasers ntawm chav tsev kub tau ntxiv lawm. nce mus rau 4.6 W, thiab qhov excitation wavelength tau nce mus rau 386.8 nm. Daim duab 1 qhia txog excitation spectrum ntawm high-power UV laser, thiab daim duab 2 qhia lub optical fais fab-tam sim no-voltage (PIV) nkhaus ntawm lub UV laser. kev tawg ntawm GaN-raws li high-power UV laser yuav txhawb lub localization ntawm cov cuab yeej thiab txhawb lub domestic UV lithography, ultraviolet (UV) laser kev lag luam. Kev tawg ntawm GaN-raws li high-power UV laser yuav txhawb lub localization ntawm cov cuab yeej thiab txhawb kev ywj pheej txoj kev loj hlob ntawm domestic UV lithography, UV curing, UV kev sib txuas lus thiab lwm yam teb.
Cov txiaj ntsig tau luam tawm raws li "Kev txhim kho qhov kub thiab txias ntawm GaN-based ultraviolet laser diodes los ntawm kev siv InGaN / AlGaN quantum wells" hauv OSCE. Cov txiaj ntsig tau luam tawm hauv Optics Letters nyob rau hauv lub npe ntawm "Kev txhim kho qhov kub thiab txias ntawm GaN-based ultraviolet laser diodes los ntawm kev siv InGaN/AlGaN quantum wells" [Optics Letters 49, 1305 (2024) https://doi.org/10.1364/OL .515502. Dr. Jing Yang yog thawj tus kws sau ntawv thiab Dr. Degang Zhao yog tus sau cov ntawv sib xws. Txoj haujlwm no tau txais kev txhawb nqa los ntawm ntau qhov haujlwm, suav nrog National Key Research and Development Program of China, National Natural Science Foundation of China, thiab Strategic Pilot Science and Technology Special Project of Chinese Academy of Sciences.
Daim duab 1 Excitation spectrum ntawm high-power UV laser
Daim duab 2 Optical fais fab-tam sim no-voltage (PIV) nkhaus ntawm UV laser
